Abstract
Thin films of Al2O3 synthesized by atomic layer deposition provide an excellent level of interface passivation of crystalline silicon (c-Si) after a postdeposition anneal. The Al2O3 passivation mechanism has been elucidated by contactless characterization of c-Si/Al2O3 interfaces by optical second-harmonic generation (SHG). SHG has revealed a negative fixed charge density in as-deposited Al2O3 on the order of 1011 cm−2 that increased to 1012–1013 cm−2 upon anneal, causing effective field-effect passivation. In addition, multiple photon induced charge trapping dynamics suggest a reduction in recombination channels after anneal and indicate a c-Si/Al2O3 conduction band offset of 2.02±0.04 eV.
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