Abstract
Epitaxial germanium film growth by a surface reaction was investigated using a pulsed molecular jet. Time-resolved reflectometry was utilized for in situ monitoring of both the formation and the evolution of a chemisorbed layer of digermane. The rate of chemisorption was independent of temperature. Evolution of the adsorption layers occurred by a temperature dependent first order process, believed to be molecular hydrogen desorption. Digital growth of germanium films was demonstrated by periodically refilling the active surface sites liberated by molecular hydrogen desorption between two successive gas pulses. Epitaxial germanium films over 150 nm thick were grown on Si (100) substrates.
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