Abstract
Ion-induced photon emission under 60 keV Cu − implantation into the insulators of MgAl 2O 4 and LiNbO 3 was in situ measured over a wide wavelength range from 200 to 900 nm. The formation of the Mg and Li deficient layers for the respective insulator was detected based on the dose dependence of the Al, Mg and Li atomic line intensities. The Al I and Mg I line intensities from spinel exhibit different behaviors depending on irradiation temperatures: they gradually decrease while the (Al I)/(Mg I) ratio increases up to dose of 3×10 17 ions/cm 2 at room temperature or exhibits a steady-state tendency at high temperature. Sharp decrease of Li I line intensity from LiNbO 3 under high dose rate bombardment indicates drastic changes of surface layer that may alter the phase stability and optical performance of insulators.
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