Abstract
AbstractThin films of Cu(In,Ga)Se2 with various copper contents were deposited by co‐evaporation onto thermally oxidized silicon substrates. Characterization by real‐time spectroscopic ellipsometry reveals clear similarities among the samples, as well as key variations with Cu content. Although all films exhibit a Volmer–Weber nucleation and similar fundamental critical point energies in the analysis of optical properties, Cu‐rich films exhibit enhanced coalescence, smoother surfaces, larger grain sizes, as well as a sub‐bandgap absorption which is absent in Cu‐poor films. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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