Abstract
The surface phase transition of GaAs (0 0 1) from the As-rich 2×4 surface to the Ga-rich 4×2 surface and the reverse transition were analyzed in real-time using time-resolved core-level photoelectron spectroscopy incorporating the photoelectron diffraction effect. From the analysis of the time dependence of core-level photoelectron intensities and spectra, we found a large anisotropy in the intensities and spectra caused by the photoelectron diffraction effect. This anisotropy in the intermediate state of the transition from the 2×4 to the 4×2 differs from that of the reverse transition, indicating that the surface phase transition pathways differ.
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