Real space hot electron distributions and transfer effects in heterostructures

Abstract

Motions of hot electrons in real space of heterostructures were simulated under different boundary conditions by using Monte Carlo simulation. Hot electron distributions in real space are calculated self-consistently by taking into account the space charge field across the heterointerface of Al 0.3 Ga 0.7As/GaAs where the electric field is applied parallel to the interface. The analysis was also extended to the valley transfer effects of hot electrons across to the interface, where the energy states are abruptly changed. A considerable high drift velocity was obtained under high fields in In 0.53Ga 0.47As/InP, because the real space transfer effect can suppress hot electron transfer to higher valleys in InGaAs.