Abstract

The details of hot electron distributions in modulation-doped GaAs/AlGaAs heterolayers are studied by electric field dependence of photoluminescence measurements. Experiments on different heterostructures reveal the effect of hot electron real space transfer, which are quantitatively compared with the electron distribution in a real space determined by Monte Carlo simulations.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call