Real embedding process of SiC devices in a monolithic ceramic package using LTCC technology

Abstract

Low temperature co-fired ceramics (LTCC) is a well-established multilayer technology for the fabrication of reliable and robust ceramic circuit boards, microsystems and sensor packages. Its ability to combine several single layer which can be geometrically and functionally structured in individual and the combination of a multitude of materials co-fired to a monolithic body distinguishes this technology in particular. In this contribution we utilize the advantages of the LTCC technology to investigate a real embedding process of Silicon carbide (SiC) semiconductor devices in a ceramic multilayer substrate during the co-firing process of the ceramic. For this purpose we investigated the shrinkage behavior of three commercial LTCC material systems (GT 951, 9k7, L8) to provide "zero-shrinkage" of the ceramic body, which is required for a mechanical and electrical joining of solid bodies as SiC devices in the LTCC multilayer. Within these results we evaluated the embedding of □2 mm and □5 mm SiC chips by varying several parameters to evaluate a feasible material and parameter combination. Finally the embedding results in regard to the material properties of the LTCC materials are discussed.