Abstract
Abstract The two-dimensional modelling of the etching of silicon oxide in CF 4 +H 2 plasma is considered. The profiles of etched trenches at real dimensions are calculated as a function of mask dimensions, concentrations of chemically active and non-active plasma components and ion bombardment parameters. The chemical composition of CF 4 +H 2 plasma is calculated, the plasmochemical etching (PCE) and reactive ion etching (RIE) of a SiO 2 in the plasma are investigated to achieve the goal. It was found that the aspect ratio and etching anisotropy decrease with increase of H 2 content in the feed during SiO 2 etching in CF 4 +H 2 plasma. The concentration of CF radical is insufficient to passivate the sidewalls completely. Meanwhile, the formation and subsequent growth of fluorocarbon film stop etching during one-dimensional PCE of SiO 2 at critical H 2 content in the feed.
Published Version
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