Year-end Sale % OFF 
Abstract
The authors studied the structural properties of Al on III-V semiconductors (InAs, GaAs, and InGaAs) with the aim of creating smooth and abrupt interfaces. Growth conditions, such as the residual As content and the presence of intermediate layers, affect the structural properties of the Al and the underlying semiconductor. The authors find that an ultrathin layer of AlAs on (001) InAs drastically reduces the interface reaction and improves the epitaxial growth of Al. No such layer is necessary for interface reaction mitigation for Al deposited onto InGaAs or GaAs. The crystal orientation of Al planes grown on (001) InAs is [110], but is [111] on InGaAs or GaAs. The authors discuss the significance of the results for realization of structures for proximity superconductivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
