Abstract
Synthetic diamond has excellent mechanical, thermal, and electrical properties, which makes it an ideal material in a wide range applications from abrasive grinding tools to modern electronic devices. Hence, understanding the wettability of metals on the synthetic diamond is of great importance for the development of diamond-related materials and devices. In this study, the wettability and spreading kinetics of binary SnCr alloy on chemical vapour deposed (CVD) polycrystalline diamond compacts were investigated using a sessile drop method. In situ observation of contact angle at elevating temperatures indicated trace addition of Cr dramatically improved the wettability of Sn on CVD diamond, and the SnCr alloy started to wet CVD diamond at approximately 750 °C. Isothermal spreading kinetic analysis revealed that the spreading of SnCr alloy on CVD diamond was controlled by the kinetics of chemical reaction at advancing triple line. Microstructure characterization indicated that the formation of nano-sized scallop-like Cr7C3 grains was responsible for the improved wettability of SnCr alloy on CVD diamond substrate. The wetting temperature was found to play a determinant role in the interfacial carbide formation, and hence the reactive wetting of SnCr alloy on CVD diamond at temperatures from 700 to 900 °C.
Published Version
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