Abstract
Well-oriented ZnO films are reactively synthesized by means of the facing targets sputtering (FTS) method. In this paper, the change in the crystallographic characteristics of ZnO films with respect to sputtering conditions are described in detail. Films obtained by means of the FTS method exhibit one of the best c-axis orientations reported to date. The following conditions are necessary for formation of well-oriented ZnO films with good surface smoothness: (1) High-energy particle bombardment on the film surface during deposition should be suppressed and (2) the sputtered particles landing on the substrate surface should have an appropriate energy level of several eV.
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