Abstract
The indium tin oxide (ITO) cathode electrode of top emitting organic light emitting diodes (TOLEDs) was deposited by facing targets sputtering (FTS) method which can deposit thin films with low substrate damage. And it also use a plasma-free sputtering method in which substrate is located apart from plasma. So the temperature increase of substrate due to the bombardment of high-energy particles can be restrained. The ITO thin film which is a transparent electrode was deposited on the cell (Mg:Ag/LiF/EML/HTL/ITO) using two magnetic field such as concentrated magnetic field type and distributed magnetic field type, respectively. Also, the ITO thin films were deposited by sputtering current at working gas (Ar:O2 mixture gas) pressure 1 mTorr. Electrical and optical properties of ITO thin films which deposited on amorphous glass were measured and current–voltage (I–V) characteristics of ITO thin film on the cell were measured. In the results, the leakage-current density of ITO/cell prepared at concentrated magnetic filed type and distribution magnetic filed type showed about 1×10-3 mA/cm2 at -6 V and 1×10-5 mA/cm2 at -6 V, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
