Abstract
Reactive sputtering of NiCr resistors with closely adjustable temperature coefficient of resistance : J. Griessing. Electrocomp. Sci. Technol.4, 133 (1977)
Highlights
There is a growing interest in temperature-independent electronic devices
Figure shows the triode system employed for reactive sputtering
The slope of the curves represents a good approximation of the value of the temperature coefficient of resistance (TCR): temperature coefficient a 1/R x
Summary
There is a growing interest in temperature-independent electronic devices. The objective of our investigations was to devise a variant technology which would open the way to controlling the temperature coefficient of resistance during resistor fabrication without the need for any major modification of the already well-established and mature process used for the fabrication of NiCr resistor networks. The solution to this control problem was found to be reactive sputtering in an atmosphere of Ar and 02
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