Abstract
Reactive scattering of a pulse O2 beam with a Si(111) surface at the substrate temperature of 1250±50 K has been studied with the resonance enhanced multiphoton ionization (REMPI) mass spectroscopy. Only the SiO molecule has been observed as a reaction product. REMPI spectra of the desorbing SiO molecule shows its cooler rotational temperature compared with its vibrational temperature and the surface temperature.
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