Abstract
Reactive scattering of a pulse O 2 beam with semiconductor surfaces (Si and Ge) at the substrate temperature above 970 K has been studied with a resonance enhanced multiphoton ionization (REMPI) mass spectroscopy. Only mono-oxide species (SiO and GeO) are observed as a reaction product. The vibrational and rotational state distributions of SiO desorbed from the Si surface in the reactive scattering of O 2 at surface temperature at 1273 K are thermally equilibrium with the surface temperature and the vibrational distribution of GeO was also found to be thermalized to the surface temperature at 970 K. The spatial distribution of SiO and GeO desorption fluxes are found to be isotropic. The results suggest that the mono-oxides species passed through a rotationally free state during the desorption trajectories.
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