Reactive remote plasma sputtering of TiOx thin films and controlled growth of textured single-phase rutile using rf substrate biasing

Abstract

Titanium oxide (TiOx) thin films were deposited by remote plasma sputtering (RPS) with the use of rf substrate bias onto unheated and water-cooled glass, Si, and Kapton substrates. The rf remote plasma power was kept constant (2.0 kW) and the properties of the films were studied as a function of deposition rate and substrate bias voltage. Four different reactive processes at four different deposition rates were developed under zero bias conditions by altering the target bias voltage and the flow of oxygen to give highly transparent TiOx films. These processes were studied with varying substrate bias voltage and the film structural, optical, and surface properties were investigated by GI-XRD, SEM, transmission, and sessile drop measurements. The changes in film structure and properties observed were related to the plasma conditions of the RPS system, investigated by dc electrical probe and OES measurements, and compared with other observations for films deposited under energetic conditions in the literature. All films deposited under zero bias conditions exhibited amorphous structures in GI-XRD and SEM images. Sufficient application of substrate bias was seen to promote columnar growth in cross-sectional SEM images and to crystallise phase pure rutile with no detection of the anatase phase in GI-XRD. Rutile bearing films were noted for their change in optical properties. Further increase of the substrate bias voltage caused a change in the texture of the rutile films from a low-energy [110] preferred orientation to a high-energy [101] and [002] preferred orientation. Contact angles of water with deposited films were found to increase with increasing substrate bias voltage and decreasing deposition rate. Film stress was also found to be influenced mainly by the substrate bias voltage process parameter.