Abstract
Planar magnetron sputtering system with obliquely facing targets was constructed to prepare ZnO films, and the possibility of the application of this sputtering system to the practical preparation of ZnO was studied. The films were prepared by the sputtering of Zn in O2 (100%) and the target-substrate configuration was arranged to avoid film bombardment by energetic oxygen particles. Gas pressure dependence of the c-axis orientation of the film was estimated. The presented sputtering system provided more highly c-axis-oriented polycrystalline films of ZnO than ordinary planar magnetron sputtering.
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