Abstract
Maskless random reactive ion etching (RIE) texturing employing a SF6/O2/Cl2 gas mixture was investigated in order to achieve higher efficiencies in multicrystalline silicon (mc-Si) solar cells. Triangular pyramid structures with an aspect ratio of 1 were formed and, when the RIE power increased, the average reflectance was reduced by about 1.46% per 10 W. This was due to the increased density of the surface features. The performances of all of the RIE-textured mc-Si solar cells were improved compared with that of the reference cell. Among them, the 110 W cell, which had a 0.6% higher efficiency than the reference cell, had the highest efficiency of 16.82%. An impedance analysis was carried out to determine series resistance (Rs), shunt resistance (Rsh), and junction capacitance (Cj). Interestingly, the cell with higher efficiencies and higher structure densities had higher linear reverse currents.
Published Version
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