Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

Abstract

This paper reports reactive ion etching (RIE) of poly (cyclohexene carbonate) (PCC), a thermal decomposable polymer that can be used as a sacrificial material for fabrication of embedded micro cavities and channels. The dependence of etching rate and anisotropy on RF power, chamber pressure, and O2 flow rate has been investigated. Experimental results show that all these parameters have influences on etching rate and anisotropy, and RF power and chamber pressure are, respectively, the two dominant factors that affect etching rate and anisotropy. Etching rate can be increased at high RF power, optimal chamber pressure and optimal O2 flow rate. Etching anisotropy can be improved by using high RF power, low chamber pressure, and low O2 flow rate.