Abstract
In this paper the selective patterning of poly [2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) and poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) based on reactive ion etching for device fabrication is examined. These polymers were anisotropically etched using RIE in a helium plasma. Results show clearly that RIE using helium gas is effective at etching the polymers from the selected areas without physical damage to the working device. Further results show the electroluminescence spectra of etched and unetched devices have almost identical emission spectra, when these devices are operated as an LED. The external quantum efficiency (EQE) for these photodetectors was calculated and EQE peak values reached at 580nm are consistent between etched devices and unetched controls. Test devices show no decrease in EQE performance from RIE.
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