Abstract
Due to their high perimeter-to-area ratio, sidewall damage and surface recombination have greater negative influences on the external quantum efficiency (EQE) performance of μLEDs. This results in a reduction in electrical efficiency as device dimensions shrink to micron dimensions. We have developed several novel fabrication technologies and determined their influence on achieving high EQE μLEDs. In particular, we have determined that atomic layer deposition (ALD) for sidewall passivation, chemical treatment, and tunnel junctions, all play an important role in achieving efficient μLEDs. By employing these methods, the EQE performance has been enhanced and the effects of sidewall damage and surface recombination are greatly suppressed or eliminated, thus size-independent EQE characteristic are demonstrated. Recent advancements in the fabrication of III-nitride green and red μLEDs emitters are also addressed.
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