Abstract
For the first time, the reactive ion etching (RIE) of β-SiC in CCI2F2/O2 gas mixture is reported. The addition of oxygen to the CC12F2 does not appear to enhance the etch rate, however, the RF power and the DC bias conditions prove to be the dominant factors for controlling the etch rate. In addition, fine line structures with vertical walls and smooth etched surfaces are achieved.
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