Abstract
A phenomenological study of Reactive Ion Etching (RIE) of GaAs and Al.Gal_xAS (x=0.76) using BC13/CC12F2/He has been carried out in order to obtain equal rates for etching the two semiconductors with vertical walls and smooth etched surfaces. The influences of 02 and H2, added purposely or inadvertently, the roles of added CC1<sub>2</sub>F<sub>2</sub> and He, and the effect of wafer size (loading effect) have been investigated on a limited basis. Equal etch rates, vertical (to tilde 1°) etched walls and smooth etched surfaces were attained for both GaAs and A1GaAs with and without a GaAs capping layer and with no special surface treatment of the wafers prior to etching in a commercially available RIE system used for the studies.
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