Abstract
The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions. This study showed that PMMA can be used as a masking resist for etching silicon dioxide using fluorine-deficient etch gases. Linewidths with dimensions of 0.1 μm have been obtained in silicon dioxide with usable selectivity between PMMA and silicon dioxide.
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