Abstract
The introduction of dry etch damage into n-type SiC has been measured by monitoring the sheet resistance after exposure to Ar plasmas under both reactive ion etching and electron cyclotron resonance conditions. The threshold rf powers for measurable resistance changes in 1 μm thick films are ∼250 W for reactive ion etching (RIE) conditions, and ∼150 W for electron cyclotron resonance (ECR) conditions. A major annealing stage occurs with an activation energy of ∼3.4 eV, but some damage remains even after 1050 °C annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have