Abstract
In this paper a new technique is proposed for precise doping control of ZnO:Al thin films deposited in reactive High Power Impulse Magnetron Sputtering (HIPIMS). An auxiliary aluminum electrode was added to a reactive Ar/O2 pulsed magnetron with planar Zn target in order to obtain a controlled doping of ZnO films. Al neutral density in gas phase has been controlled by the discharge current and the biasing voltage on the auxiliary electrode (which influence the ion bombardment of the electrode) and measured by laser resonant absorption spectroscopy. The fraction of Al dopant in the deposited films was estimated by X-ray Photoelectron Spectroscopy (XPS) measurements. The goal of this work was to correlate Al density measured in the gas phase with Al concentration in the deposited films. It was also investigated the effect of the aluminum concentration on the structural, electrical and optical properties of ZnO:Al thin films deposited by HIPIMS. The internal microstructure and chemical composition of the deposited films was examined by X-ray difractometry (XRD) and X-ray Photoelectron Spectroscopy (XPS). The optical properties of the deposited films were studied by UV/VIS and photoluminescence spectroscopy.
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