Abstract
The SiGe thin films, such as hydrogenated amorphous SiGe (a-SiGe:H) and hydrogenated microcrystalline SiGe (μc-SiGe:H), are known as a potential material. In order to form promising SiGe thin films using chemical vapor deposition, relationship between materials/process and structure/composition should be clarified at the atomic level. We analyzed the influence of the substrate temperature and the ratio of SiH3 and GeH3, which are considered to be the dominant gaseous species on the deposition, on the crystallinity and atomic content in SiGe thin films by reactive force-field molecular dynamics simulations. The crystallinity increases as the substrate temperature increases and reaches its minimum value when the ratio of SiH3 and GeH3 is approximately 0.5. The hydrogen content decreased as the substrate temperature increases, while silicon and germanium content tended to increase as substrate temperature increase. These results were in good agreement with relevant studies.
Published Version
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