Abstract
The growth of cobalt disilicide on the Si(100) surface by reactive epitaxy at T=350°C was studied within the 10–40 ML cobalt coverage range. A new method of mapping the atomic structure of the surface layer by inelastically scattered medium-energy electrons was employed. The films thus formed were shown to consist of CoSi2(221) grains of four azimuthal orientations turned by 90° with respect to one another. This domain structure originates from substrate surface faceting by (111) planes, a process occurring during silicide formation. B-oriented CoSi2(111) layers grow epitaxially on (111) facets.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call