Abstract

The reactive deposition of thin films is analyzed by means of a microphysical model. This model shows the way in which to (i) eliminate the hysteresis effect and (ii) control the deposition process. Special attention is devoted to physical parameters, such as fluxes of ions v i, metallic particles v m and reactive gas particles v r, the energy of particles bombarding the growing film and the substrate temperature which play a fundamental role in the deposition process, and to deposition systems with enhanced ionization. A correlation between (i) process parameters, (ii) microstructure, texture, phase and chemical composition of films, and (iii) resulting film properties is discussed in detail for Ti−N films. A comparison of arc evaporation and magnetron sputtering is also given. The need for equipment providing independent control of the deposition rate and ion bombardment of films is emphasized.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call