Abstract
Many of the processes currently used in the semiconductor industry for the fabrication of microdevices involve chemical reactions at a solid/gas interface. The role of gas-phase metal reactions in the heterogeneous processes of chemical vapor deposition and dry etching is examined. Kinetic information available on the dry etching of Al, Cu, W and other metals is reviewed and compared with the more extensively studied etching of Si. Selective and blanket chemical vapor deposition (CVD) techniques of metals such as Cu and W are described.
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