Abstract
Cu selective and blanket CVD (chemical vapor deposition) and film characteristics are described for filling high-aspect-ratio via and/or contact holes for future deep submicron Cu interconnections. High-quality CVD Cu film is easily formed by using H/sub 2/ reduction of the Cu complex. Excellent planarization is obtained with via and/or contact filling by Cu selective and/or blanket CVD following by an etch-back process. Also, a high-temperature Cu fine patterning method by RIE has been developed that uses a new gas system. Double-level Cu interconnections have been obtained with the Cu selective CVD and new Cu RIE technologies. >
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