Abstract
Accelerated-deposition-rate chemical vapor deposition (CVD) of copper is studied using hydrogen reduction of bis-hexafluoro acetylacetonate copper (Cu(HFA)2). An in-situ hydrated Cu(HFA)2 formation system using gaseous H2O addition to the hydrogen carrier gas increases the deposition rate to 90 nm/min. This is about ten times larger than that of the conventional reaction system. It also improves the surface morphology and the electrical resistivity of the deposited copper film. A high-aspect-ratio via filling by selective CVD and excellent step coverage by blanket CVD are successfully obtained with this technique.
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