Abstract
Reactions between different kinds of ceramics and silicon were studied to evaluate ceramics as candidates for their use in the process of silicon-crystal growth. Three types of ceramic plates, Al2O3, ZrO2 and quartz (SiO2), were put into contact with a silicon wafer via annealing at 1450 ?C for 30min under an Ar atmosphere. Defects appeared at the Si-ceramics interface. Among these, a crack and a dislocation pile up were found at the Si-SiO2 dissolution couple. In addition, two intermetallic compounds, Y2Si2O7 and Zr-Si, produced by the diffusion of Y, O and Zr from the ZrO2 into the Si, were found at the Si-ZrO2 dissolution couple. At the interface of the Si-Al2O3 dissolution couple, no intermetallic compounds and few defects were found. The oxygen concentration and electrical resistivity near the interface were high and gradually decreased away from the interface for all Si-ceramics dissolution couples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
