Abstract
Reactions of hydrogen-terminated Si(100) surfaces with oxygen at very low pressures during heating are characterized by a method that combines heating and cooling in thermal desorption spectroscopy. Surface hydrogen coverage as a function of temperature is estimated from the hydrogen desorption spectrum obtained by the combination measurement. The surface coverage under the condition with or without introducing oxygen gas indicates that the hydrogen of silicon monohydride begins to desorb after almost half the hydrogen of silicon dihydride desorbs. The hydrogen desorption behavior under the introduction of oxygen gas suggests that bonding between Si and hydrogen atoms for silicon monohydride at the Si(100) surface is stabilized by adsorption of oxygen atoms on surface Si back bond sites during heating.
Published Version
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