Abstract
The development of highly sensitive resists containing tin, which has a large EUV absorption cross section, has recently attracted considerable attention in EUV lithography. The effective utilization of secondary electrons is required for the development of high-performance resists. It is important to design resist materials on the basis of the mechanism of radiation chemical reactions. In this study, the radiation-induced reactions of tetraphenyltin (TPSn), triphenylsulfonium triflate (TPS-Tf), and the copolymer of triphenyl(4-vinylphenyl) stannane (TPSnSt) and 4-methacryloxyphenyldiphenylsulfonium triflate (MAPDPS-Tf) were investigated by electron pulse radiolysis and γ-radiolysis in controlled reaction systems. The decomposed products were analyzed by high-performance liquid chromatography. The G values of decomposed products were determined. For the copolymer, the holes generated by ionizing radiations moved to Sn units and electrons moved to TPS-Tf units. The tin complex side chain decomposed, producing benzene after hole transfer.
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