Abstract
A detailed description is given of the microstructure of the top layer of Ti–6Al–4V with SiC particles embedded with a high-power Nd:Yag laser system. Scanning electron microscopy (SEM), as well as conventional, analytical and high-resolution transmission electron microscopy (TEM) were used. An existing controversy about the presence or absence of Ti 3SiC 2 in the reactive SiC/Ti systems is clarified and the first observations of Ti 5Si 3 precipitation on stacking faults in Si supersaturated TiC are reported. The Si released during the reaction SiC+Ti→TiC+Si results in the formation of Ti 5Si 3. If in the reaction layer regions in between the TiC grains become enclosed, the rejected Si content increases locally and Ti 3SiC 2 plates with dominant (0001) facets nucleate. In the TiC grains particularly of the cellular reaction layer, a high density of widely extending stacking faults of the order of 100 nm is observed and on these faults in many instances small Ti 5Si 3 precipitates are present.
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