Abstract
Through a novel preparation process, 50 μm diamond particles are successfully filled into the gaps formed by closely arranged 400 μm diamond particles, thereby obtaining diamond/SiC composites with high diamond content and uniform structure. The diamond volume fraction and thermal conductivity of the composite are 79.18% and 722.55 W/mK, respectively, both are the maximum values of the diamond/SiC composites prepared by pressureless infiltration at present. The innovative preparation method provides a new solution for the uniform mixing of particles of different sizes in composites.
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