Abstract
We investigate the applicability of current total ionizing dose (TID) test protocols in the context of advanced transistor technologies such as Silicon-Germanium heterojunction bipolar transistors(SiGe HBTs). In SiGe HBTs, an unexpected shift in collector current is observed during total dose irradiation. Using both device and circuit measurements, we investigate this phenomenon and assess its potential importance in hardness assurance of SiGe components. TCAD simulations were performed to explain the observed current shifts.
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