Re-evaluation of energy dependence of electronic stopping cross-section for Al ions into 4H-SiC (0001)

Abstract

To apply channeled-ion implantation to cost-effective multi-epitaxial growth for 4H-SiC superjunction devices, we re-evaluated the Al-ion energy (E) dependence of the electronic stopping cross section (S e) in 4H-SiC based on the recently reported secondary-ion mass spectrometry measured depth profiles. By including the effect of stripping of the ion electrons on the E dependence of S e, we successfully reproduced the reported maximum channeled ranges of Al into 4H-SiC (0001), ranging from 0.6 μm at the implantation-energy (E 0) of 60 keV to 7.2 μm at E 0 of 8 MeV.