Abstract
Ge–Sb–Te (GST) alloys are one of the most successful chalcogenides used in rewritable optical discs and electric non-volatile memories. In these materials the structural phase transition between amorphous and crystalline states is used for recording. Here, we report that a melt-quenching method is not necessarily the only way to form a high-resistance phase. We found that amorphous-like grains with high resistance are formed in the GST crystal film by holding it at above the crystallization temperature under an external magnetic field, followed by cooling accompanied with pulse current injection. The treatment may open new route for ultra-low current switching phase change memory.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
