Abstract
Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Zr9(Ge2Sb2Te5)91 film was investigated as storage material for phase-change memory application. The crystallization temperature (Tc) and 10 years data retention temperature of the Zr9(Ge2Sb2Te5)91 film are about 195 and 106.7°C, respectively, and both higher than that of Ge2Sb2Te5 (GST). The sheet resistance ratio between amorphous and crystalline states is up to four orders of magnitude. The crystalline resistance of Zr9(Ge2Sb2Te5)91 film is higher than GST for one order of magnitude, which contribute to reduce the power consumption for PCM device. Zr9(Ge2Sb2Te5)91 film exhibit larger optical band gap in comparison with GST. Zr9(Ge2Sb2Te5)91 is considered to be a promising material for phase change memory.
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