RC-IGBT-thyristor structure having trenches filled with dielectric on the backside: Physical analysis and application to the integration of a multiphase generic power converter using the “two-chip” approach

Abstract

The RC-IGBT-thyristor is a bidirectional current device proposed as an elementary structure for the integration of a multiphase converter using the two-chip” integration approach [1]. In this paper, 2D simulations are on one hand used to study the impact of using trenches filled with dielectric [2] on the static and dynamic performance of the RC-IGBT-thyristor and on the other hand to validate the operating modes of the common anode and common cathode power chips that make use of the RC-IGBT-thyristor that has trenches filled with dielectric on the backside. In the RC-IGBT-Thyristor with trenches, the trenches are placed between N+ anode regions to allow the turn-on of the thyristor sections during the RC-IGBT-thyristor reverse conducting mode. The use of these trenches allows reducing the lengths of N+/P+ anode diffusion regions (as compared to the case of the RC-IGBT-Thyristor [1]) and also improves the uniformity of the current density distribution both in the forward and reverse conducting modes of the RC-IGBT-thyristor. The RC-IGBT-thyristor with trenches filled with dielectric is then used to create the two monolithic common anode and common cathode power chips. These three-pole power chips, were simulated separately and then associated to form an H-bridge converter.