Abstract
The possibilities and limitations of the Rutherford backscattering spectrometry and ion channeling in the high and medium ion energy region for the characterization of heteroepitaxial structures are demonstrated. The thickness and change of the stoichiometry at buried interfaces were determined for thin CdTe layers grown on (001) GaAs. A multilayer twin structure of a (111) CdTe layer with single twin layer thickness less than 3.5 nm was proved by an azimuthal-dependent (111) channeling analysis with 300 keV protons. The stoichiometry, superlattice period and crystalline quality have been determined for superlattices with Sb delta-doped layers in silicon and for InGaAs/GaAs strained-layer superlattices (SLS's). For thin layered SLS's the application of a new channeling method for strain measurements is shown. The results are in good agreement with computer simulations of ion channeling and with XRD measurements. Results of the location of misfit dislocation networks are obtained by a backscattering-angle-dependent dechanneling analysis.
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