Abstract
In this paper, the application of a universal computer stimulation program for a quantitative analysis of the strain in SiGe and II–VI strained-layer superlattices (SLSs) by the dechanneling method is demonstrated. The dependence of the dechanneling method on the superlattice period and the limitations of this method are discussed. Furthermore, the possibilities and limitations of a backscattering-angle-dependent dechanneling method for the simultaneous determination of the location of a misfit dislocation network and of channeling stopping power are shown for III–V and II–VI heteroepitaxial structures.
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