Abstract
Abstract The thermal annealing behavior of Cu thin films deposited on Si(100) and (111) substrates has been studied by RBS/channeling methods. The effect of substrate pretreatment and of annealing conditions has been investigated. The initial stage of the interface formation has also been studied in ultrahigh-vacuum conditions.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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