Abstract
The Rashba spin–orbit interaction in InGaAs quantum wells (QW) is studied using the weak antilocalization analysis as a function of the structural inversion asymmetry (SIA). We have observed a clear cross-over from positive to negative magnetoresistance near zero-magnetic field by controlling the degree of the SIA in the QWs. This is a strong evidence of a zero-field spin splitting that is induced by the Rashba effect. The spin-interference effect in a gate-controlled mesoscopic Aharonov–Bohm ring structure is investigated in the presence of Rashba spin–orbit interaction. The oscillatory behavior appearing in ensemble averaged Fourier spectrum of h/2e oscillations as a function of gate voltage is possibly because of the Aharonov–Casher type interference. We propose a spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode structure. Detailed calculation using InAIAs/InGaAs heterostructures shows that the spin-filtering efficiency exceeds 99.9%.
Published Version
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