Rare-earth implanted Y 2O 3 thin films

Abstract

Thin Er, Yb co–doped Y 2O 3 films were grown by pulsed laser deposition from ceramic target. Subsequent ion implantation with 1.1 MeV Er + ions to a fluence of 6 × 10 14 at/cm 2 at room temperature was performed in order to modify the structure of the as-deposited films. The as-deposited films have a polycrystalline column-like structure. Ion implantation induces defects into the as-deposited films. After annealing at 900 °C for 1 h in oxygen atmosphere, the films recrystallize in roundly shaped grain-like structure with grain size of about 100 nm. The Er 3+ photoluminescence response was obtained for all the films by excitation through cross-relaxation of Yb 3+ ions. The IR emission spectrum, consisting of two narrow peaks at 1415 and 1514 nm, differs from the typical spectra of Er-doped materials. The VIS emission spectrum observed in as-deposited films does not appear after implantation and subsequent 900 °C annealing.