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https://doi.org/10.1039/d3ee02482b
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Cite Journal: Energy & Environmental Science |  Publication Date: Jan 1, 2024 |
 Citations: 24 |
Three-valence-band (i.e., L, Σ and Λ) charge transport and multiple-scale defects were simultaneously achieved in p-type SnTe through dual incorporation of MnCdTe2 and Ge, which contributed to a record-high ZT of ∼1.97 at 900 K.
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