Rapid thermal metal organic chemical vapor deposition of ZnTe

Abstract

We report the epitaxial growth of ZnTe by means of the rapid thermal metal organic chemical vapor deposition (RT-MOCVD) technique. Growth of a single layer of undoped (1 1 1) B-face ZnTe on (1 1 1) B-face CdTe substrates has been performed at 370–480°C and a total pressure of 100 Torr, using diethylzinc (DEZn), diisopropyltelluride (DIPTe) and diethyltelluride (DIPTe) as the metal organic sources. Different photothermal pretreatments were used for substrate surface preparation. The epilayers properties were examined by the aids of X-ray four crystal rocking curve (FCRC), secondary ion mass spectroscopy (SIMS), photoluminescence (PL) and profilometer thickness measurements. High growth rates up to 30 m/h have been obtained. X-ray (3 3 3) reflection rocking curves with full-width at half-maximum (FWHM) of 330–350 arcsec have been obtained for growth at 370–410°C with growth rates 6–30 mm/h using in situ photothermal preheating at 400°C. Sharp high-intensity PL peaks have been found which were identified as the free exciton peak accompanied by four longitudinal optical (LO) phonon replica. No broad peaks related to defects have been observed.